发明名称 |
ESD protection circuit with improved trigger-on voltage |
摘要 |
An electrostatic discharge (ESD) protection circuit includes at least one MOS transistor coupled between a power supply and ground. A voltage differentiation module is coupled between a gate and a substrate of the MOS transistor, such that a voltage difference is created between the gate and the substrate. Accordingly, a surface current path of the transistor is created in addition to a substrate current path from the gate to the substrate for dissipating an ESD current thereacross, during an ESD event. This improves a trigger-on voltage of the ESD protection circuit.
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申请公布号 |
US2006044716(A1) |
申请公布日期 |
2006.03.02 |
申请号 |
US20040931458 |
申请日期 |
2004.08.31 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
KUO CHEN-CHI;HUANG SHAO-CHANG |
分类号 |
H02H9/00 |
主分类号 |
H02H9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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