发明名称 ESD protection circuit with improved trigger-on voltage
摘要 An electrostatic discharge (ESD) protection circuit includes at least one MOS transistor coupled between a power supply and ground. A voltage differentiation module is coupled between a gate and a substrate of the MOS transistor, such that a voltage difference is created between the gate and the substrate. Accordingly, a surface current path of the transistor is created in addition to a substrate current path from the gate to the substrate for dissipating an ESD current thereacross, during an ESD event. This improves a trigger-on voltage of the ESD protection circuit.
申请公布号 US2006044716(A1) 申请公布日期 2006.03.02
申请号 US20040931458 申请日期 2004.08.31
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 KUO CHEN-CHI;HUANG SHAO-CHANG
分类号 H02H9/00 主分类号 H02H9/00
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