发明名称 Thin-layer chemical transistor and making method
摘要 In a thin-layer chemical transistor having a metal/solid electrolyte/semiconductor structure, the materials of which the solid electrolyte and semiconductor layers are made comprise organic solvent-soluble compounds. The transistor can be fabricated solely by solvent processes, typically printing techniques including ink jet printing.
申请公布号 US2006043432(A1) 申请公布日期 2006.03.02
申请号 US20050199152 申请日期 2005.08.09
申请人 OSAKA UNIVERSITY 发明人 KAWAI TOMOJI;TANIGUCHI MASATERU;FUKUI IKUO
分类号 H01L23/58 主分类号 H01L23/58
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