Flash memory devices having an alternately arrayed inter-gate dielectric layer and methods of fabricating the same

摘要

Flash memory devices include a semiconductor substrate having an active region. A gate pattern on the active region includes a floating gate pattern and a control gate pattern with an inter-gate dielectric layer pattern therebetween. The inter-gate dielectric layer pattern includes a plurality of hafnium oxide layers and a plurality of aluminum oxide layers, ones of which are alternately arrayed.