| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a display device, having TFTs in which the utilization efficiency of material is improved, deviation of the threshold level is unlikely to occur with fewer number of photomasks, and high-speed operation is possible. SOLUTION: One embodiment of the display device has a source electrode layer, drain electrode layer and pixel electrode layer provided atop an insulation surface; has a semiconductor layer having one conduction type on the source electrode layer and the drain electrode layer; has a crystalline semiconductor layer on the semiconductor layer having the one conduction type; has the crystalline semiconductor layer on the semiconductor layer having the one conduction type; has a gate insulation layer in close proximity to the crystalline semiconductor layer; has a gate electrode layer in close proximity to the gate insulation layer; and has an insulating layer on the gate insulating layer, the gate electrode layer, and the pixel electrode layer, wherein the gate insulating layer and the insulating layer have a first aperture arriving at the source electrode layer or the drain electrode layer and a second aperture arriving at the pixel electrode layer and have wiring layers, where the source electrode layer or the drain electrode layer and the pixel electrode layer are electrically connected in the first aperture and the second aperture. COPYRIGHT: (C)2006,JPO&NCIPI |
