| 摘要 |
PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor (HBT) having superior ON-withstand voltage V<SB>CE</SB>in which ON-withstand voltage of the HBT is raised to improve output characteristics of the HBT and capability of the HBT to resist large impedance mismatching (high VSWR). SOLUTION: A high electric field near a junction between a collector layer and a sub-collector layer constituting a collector region of the HBT is inhibited to improve the ON-withstand voltage. COPYRIGHT: (C)2006,JPO&NCIPI |
