发明名称 |
Cap for semiconductor device |
摘要 |
In a cap for a semiconductor device in which a light transmissive window is fixed to a cap body provided with a light transmissive opening using low-melting glass as a fixing material so that the light transmissive window covers the light transmissive opening, the low-melting glass is leadless vanadate-series low-melting glass, and the light transmissive window is fixed to the cap body through an eutectic alloy layer formed by an eutectic reaction of vanadium contained in the low-melting glass and metal applied on the surface of the cap body.
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申请公布号 |
US2006043404(A1) |
申请公布日期 |
2006.03.02 |
申请号 |
US20050216404 |
申请日期 |
2005.08.31 |
申请人 |
SHINKO ELECTRIC INDUSTRIES CO., LTD. |
发明人 |
HATAKEYAMA YASUSHI |
分类号 |
H01L33/00;H01L23/02;H01L23/10;H01S5/022 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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