| 摘要 |
<p>The invention relates to the use of currentlessly deposited ternary nickel-containing metal alloys of the type NiM-R (whereby M = Mo, W, Re, Cr and R = B, P) in semiconductor technology. The invention particularly relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.</p> |
