发明名称 HEAT DISSIPATION SUBSTRATE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a heat dissipation substrate capable of properly diffusing heat generated by a semiconductor device mounted on a mounting surface and operating the semiconductor device in a normal and stable manner over a long period of time. SOLUTION: This heat dissipation substrate has a mounting section to mount the semiconductor device in the center of the substrate, and an insulation frame is attached so that it may surround the mounting section on the upper surface of the heat dissipation substrate. In order to effectively radiate the heat generated by the operation of the semiconductor device into the atmosphere, the heat dissipation substrate comprises a composite material layer 3a made of porous material of tungsten or molybdenum with copper impregnated and copper layers 3b located on the upper surface and the lower surface of the composite material layer 3a, both of which are continuously connected to the copper impregnated in the composite material layer 3a. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006060247(A) 申请公布日期 2006.03.02
申请号 JP20050290320 申请日期 2005.10.03
申请人 KYOCERA CORP 发明人 MATSUZONO SEIGO
分类号 H01L23/373 主分类号 H01L23/373
代理机构 代理人
主权项
地址