Silicon package for piezoelectric device

摘要

A hermetic package for electronic components which is made of metallic silicon is disclosed. The package creates a cavity for receiving the electronic component, preferably a piezoelectric device, which provides a evacuated environment in the range of 1x10^-5 to 1x10^-11 torr. In a first embodiment, the single crystal metallic silicon is p-doped to make it electrically conductive, obviating the need for lead wires which could compromise the hermeticity of the package. Silicon-to-silicon bonding is preferably accomplished using brazing of the cover to the base member using gold indium eutectic alloy at 495° C. A method of making a surface mountable electronic component having an internal hermetic environment is also described.