发明名称 |
N-gate transistor |
摘要 |
A n-gate transistor, and method of forming such, including source/drain regions connected by a channel region and a gate electrode coupled to the channel region. The channel region has many angled edges protruding into the gate electrode. The many angled edges are to act as electrically conducting channel conduits between source/drain regions.
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申请公布号 |
US2006046452(A1) |
申请公布日期 |
2006.03.02 |
申请号 |
US20050208159 |
申请日期 |
2005.08.19 |
申请人 |
RIOS RAFAEL;DOYLE BRIAN S;LINTON THOMAS D JR;KAVALIEROS JACK |
发明人 |
RIOS RAFAEL;DOYLE BRIAN S.;LINTON THOMAS D.JR.;KAVALIEROS JACK |
分类号 |
H01L21/3205;H01L21/336;H01L29/786 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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