| 摘要 |
<p>A semiconductor structure with an enhancement mode transistor device disposed in a first region and depletion mode transistor device disposed in a laterally displaced second region. An enhancement mode transistor device InGaP etch stop/Schottky contact layer is disposed over a channel layer; a first layer different from InGaP disposed on the InGaP layer; a depletion mode transistor device etch stop layer is disposed on the first layer; and a second layer disposed on the depletion mode transistor device etch stop layer. The depletion mode transistor device has a gate recess passing through the second layer and the depletion mode transistor device etch stop layer and terminating in the first layer. The enhancement mode transistor device has a gate recess passing through the second layer, the depletion mode transistor device etch stop layer, the first layer, and terminating in the InGaP layer.</p> |
