METHOD OF FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREOF

摘要

In one embodiment, a method for forming a semiconductor device (10) is described. A semiconductor substrate (11) has a first portion (14 or 16) and a second portion (18 or 20). A first dielectric layer (24 or 26) formed over the first portion of the semiconductor substrate and a second dielectric layer (30) is formed over the second portion of the semiconductor substrate. A cap (28) that may include silicon, such as polysilicon, is formed over the first dielectric layer. A first electrode layer (40) is formed over the cap and a second electrode layer (32, 36, or 40) is formed over the second dielectric.