发明名称 Verfahren zum Schalten einer Spannungsversorgung von Spannungsdomänen einer Halbleiterschaltung und entsprechende Halbleiterschaltung
摘要 A method of switching a power supply of at least one voltage domain of a semiconductor circuit uses at least one microswitch, which is designed in standard cell design, to switch the power supply, so that the standard cell design method can be automated. Multiple microswitches can be disposed, evenly distributed, over those areas of the semiconductor circuit in which there is a voltage domain of which the power supply is to be switched. The microswitches of a voltage domain are defined by being switched by the same control signal. A semiconductor circuit to switch the power supply of the voltage domain includes microswitches, which can be constructed as transistors.
申请公布号 DE102004016920(B4) 申请公布日期 2006.03.02
申请号 DE20041016920 申请日期 2004.04.06
申请人 INFINEON TECHNOLOGIES AG 发明人 JUST, KNUT;KRUEGER, THOMAS;MOEHRING, THOMAS
分类号 G06F9/45;H01L23/525;H01L23/58;H02M3/10;H02M3/155 主分类号 G06F9/45
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