发明名称 |
METHOD FOR MANUFACTURING PIEZOELECTRIC THIN FILM RESONATOR, PIEZOELECTRIC THIN FILM RESONATOR, FREQUENCY FILTER, METHOD FOR MANUFACTURING OSCILLATOR, OSCILLATOR, ELECTRONIC CIRCUIT AND ELECTRONIC EQUIPMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a piezoelectric thin film resonator having successful characteristics. <P>SOLUTION: The method for manufacturing the piezoelectric thin film resonator concerning this invention comprises a process for sequentially laminating a piezoelectric thin film 3 and a first electrode 4 and forming a layered product on an upper part of a first substrate, a process for joining a second substrate 6 and the layered product, a process for separating the first substrate from the layered product, a process for forming a second electrode 8 on an upper part of the piezoelectric thin film 3 and a process for patterning the second electrode 8, the piezoelectric thin film 3 and the first electrode 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006060680(A) |
申请公布日期 |
2006.03.02 |
申请号 |
JP20040242328 |
申请日期 |
2004.08.23 |
申请人 |
SEIKO EPSON CORP |
发明人 |
IWASHITA SETSUYA;HIGUCHI AMAMITSU |
分类号 |
H03H3/02;H01L41/08;H01L41/18;H01L41/22;H01L41/23;H01L41/311;H01L41/313;H01L41/319;H01L41/39;H03B5/32;H03H9/17;H03H9/54 |
主分类号 |
H03H3/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|