发明名称 METHOD FOR MANUFACTURING PIEZOELECTRIC THIN FILM RESONATOR, PIEZOELECTRIC THIN FILM RESONATOR, FREQUENCY FILTER, METHOD FOR MANUFACTURING OSCILLATOR, OSCILLATOR, ELECTRONIC CIRCUIT AND ELECTRONIC EQUIPMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a piezoelectric thin film resonator having successful characteristics. <P>SOLUTION: The method for manufacturing the piezoelectric thin film resonator concerning this invention comprises a process for sequentially laminating a piezoelectric thin film 3 and a first electrode 4 and forming a layered product on an upper part of a first substrate, a process for joining a second substrate 6 and the layered product, a process for separating the first substrate from the layered product, a process for forming a second electrode 8 on an upper part of the piezoelectric thin film 3 and a process for patterning the second electrode 8, the piezoelectric thin film 3 and the first electrode 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006060680(A) 申请公布日期 2006.03.02
申请号 JP20040242328 申请日期 2004.08.23
申请人 SEIKO EPSON CORP 发明人 IWASHITA SETSUYA;HIGUCHI AMAMITSU
分类号 H03H3/02;H01L41/08;H01L41/18;H01L41/22;H01L41/23;H01L41/311;H01L41/313;H01L41/319;H01L41/39;H03B5/32;H03H9/17;H03H9/54 主分类号 H03H3/02
代理机构 代理人
主权项
地址
您可能感兴趣的专利