METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE AND THE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device having a structure for supplying hydrogen easily and efficiently, and to provide its manufacturing method.

SOLUTION: When a capacitor connected with a source region 3 of a cell transistor TR is formed, an interlayer dielectric 8 is formed and a contact hole 8D for opening the source region 3 is formed therein. Subsequently, a hydrogen containing insulating film, e.g. a first plasma nitride film 9A covering the side face and the bottom face of the contact hole 8D is formed and heat-treated in a hydrogen atmosphere. In this regard, hydrogen is supplied to the source region in order to terminate a dangling bond. Thereafter, the first plasma nitride film 9A is etched and left on the side face of the contact hole 8D, and the contact hole 8D is filled with a plug 10 thus forming a capacitor CAP such that the lower electrode 12A is connected to the plug 10.

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