METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP, SEMICONDUCTOR CHIP, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor chip which can suppress the metal pollution of a semiconductor substrate caused by formation of a through electrode.

SOLUTION: A surface-side recess 9 having a predetermined depth shallower than the thickness of a wafer W is formed in one surface of the wafer W having a functional element 3 formed thereon. Next, nonmetallic material is supplied into the recess 9 to form a dummy plug 8 made of the nonmetallic material. A rear surface Wr of the wafer W opposed to the above one surface is then mechanically ground to make the wafer W thinner than the depth of the recess 9 and to change the recess 9 into a through hole passed through the wafer W. Thereafter, the dummy plug 8 within the through hole is removed. A metallic material is supplied into the through hole to form a through electrode.

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