| 摘要 |
PROBLEM TO BE SOLVED: To provide a nickel-silicon compound forming method which does not bring about an increase in processes, enables the formation of a nickel silicide showing a superior high-temperature stability on a silicon in a short time, and contributes to the improvement of transistor characteristics. SOLUTION: According to the method, a nickel film is formed on a silicon board which is then subjected to annealing processes with the final annealing temperature TH of 800°C to form a nickel silicide film. An annealing apparatus capable of changing annealing temperatures step by step is employed in the annealing processes, according to which (1) the board is heated to a first step temperature close to 400°C and is then annealed for a certain time at that temperature, (2) the board is heated to a second step temperature close to 600°C and is then annealed for a certain time at that temperature, (3) the board is heated to a third step temperature close to 700°C and is then annealed for a certain time at that temperature, and (4) the board is heated step by step for every 50°C which is followed by annealing for a certain time from around 700°C up to 800°C. COPYRIGHT: (C)2006,JPO&NCIPI
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