发明名称 |
Ohmic contact for nitride-based semiconductor device |
摘要 |
An improved ohmic contact for a nitride-based semiconductor device is provided. In particular, a semiconductor device and method of manufacturing the semiconductor device are provided in which a semiconductor structure has an ohmic contact that includes a contact layer and a metal layer thereon. The contact layer includes at least Aluminum (Al) and Indium (In), and can further include Gallium (Ga) and/or Nitrogen (N). The molar fraction of Al and/or In can be increased/decreased within the contact layer.
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申请公布号 |
US2006046458(A1) |
申请公布日期 |
2006.03.02 |
申请号 |
US20050208679 |
申请日期 |
2005.08.22 |
申请人 |
GASKA REMIGIJUS;ZHANG JIANPING;SHUR MICHAEL |
发明人 |
GASKA REMIGIJUS;ZHANG JIANPING;SHUR MICHAEL |
分类号 |
H01L21/3205;H01L21/28;H01L29/423;H01L29/74;H01L31/111 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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