Silicon nitride from aminosilane using PECVD

摘要

A process for the plasma enhanced chemical vapor deposition of silicon nitride films from nitrogen, argon, xenon, helium or ammonia and an aminosilane, preferably of the formula: (t-C₄H₉NH)₂SiH₂ that provides improved properties, particularly etch resistance and low hydrogen concentrations as well as stress control, of the resulting film for use in the semiconductor industry.