| 摘要 |
A ferroelectric memory includes a base member, a dielectric layer formed above the base member, a contact hole that penetrates the dielectric layer, a plug formed inside the contact hole, a barrier layer formed above the plug, and including a first portion with a portion formed in the contact hole and a second portion formed integrally with the first portion and above the dielectric layer, and a ferroelectric capacitor formed from a lower electrode, a ferroelectric layer and an upper electrode successively laminated in a region including above the plug.
|
