SURFACE PROCESSING METHOD OF AlN CRYSTAL, AlN CRYSTAL SUBSTRATE, THE AlN CRYSTAL SUBSTRATE WITH EPITAXIAL LAYER, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a surface processing method of AlN crystal for efficiently forming a surface of proper morphology in an AlN crystal.

SOLUTION: In the surface processing method of AlN crystal, for polishing the surface of AlN crystal 1 chemically and mechanically, slurry 17 that is used in chemical mechanical polishing, contains abrasive grains having hardness higher than that of the AlN crystal 1 and abrasive grains having hardness not higher than that of the AlN crystal 1. The volume ratio of high-hardness abrasive grains to low-hardness abrasive grains in the abrasive grains 16 of the slurry 17 can be set to be in a range of 5:95-70:30.

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