| 摘要 |
PROBLEM TO BE SOLVED: To reduce the problem of a junction leakage current by suppressing a stress generated in a substrate by an element isolation part (STI). SOLUTION: A trench 8 is formed in the active region (well region) of a silicon substrate 1. The side wall part 2A and a bottom 2B by a thermal oxidation film 2 are formed in its inner periphery. A polysilicon film 4 as a compensating material is filled in its interior. A silicon oxide film (lid part) 3 by a CVD is provided in its upper part. Since the silicon substrate 1 and the polysilicon film 4 having near a coefficient of thermal expansion are provided in the trench 8 of the STI, the volume change rate to the heat variation becomes near in the STI and its perimeter region, and an internal stress can be suppressed. COPYRIGHT: (C)2006,JPO&NCIPI
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