| 摘要 |
A semiconductor device, for example a MOSFET or IGBT, includes a region ( 30, 36, 50 ) in the drain drift region ( 14 ) juxtaposed with its channel-accommodating region ( 15 ) and spaced from the drain contact region ( 14 a) by means of an intermediate portion of the drift region. The region comprises alternating stripes ( 31, 32 ) of the first and second conductivity types, which stripes, extend alongside the channel-accommodating region ( 15 ). In a trench gated device the stripes are elongated in a direction perpendicular to the trench walls. In a planar gate device the stripes extend around the periphery of the channel-accommodating region ( 15 ) leaving the region near the gate in a direction perpendicular with respect to the gate electrotes. The dimensions and doping levels of the stripes ( 31, 32 ) are selected such that region ( 30, 36, 50 ) provides a voltage-sustaining space-charge zone when depleted. The invention enables reduction of lateral current spreading resistance in the drain drift region ( 14 ) without significantly degrading the breakdown properties of the device.
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