| 摘要 |
An atomic layer deposition (ALD) thin film deposition apparatus is provided. The atomic layer deposition (ALD) thin film deposition apparatus comprises a reactor including a support on which at least one substrate is placed and a member from which gases are sprayed, a first reaction gas supply line which is coupled with a first reaction gas supply portion which allows a first reaction gas to flow from the first reaction gas supply portion to the reactor, a second reaction gas supply line which is coupled with a second reaction gas supply portion which allows a second reaction gas to flow from the second reaction gas supply portion to the reactor for reacting with the first reaction gas, a purge gas supply line which is coupled with a purge gas supply portion and allows a purge gas to flow from the purge gas supply portion to the reactor for conducting a purge step, and an exhaust line which exhausts a gas from within the reactor to a location outside the reactor. An ALD thin film deposition method is also provided.
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