发明名称 |
GERMANIUM-ADDING SOURCE FOR COMPOUND SEMICONDUCTOR, PRODUCTION METHOD OF COMPOUND SEMICONDUCTOR USING THE SAME AND COMPOUND SEMICONDUCTOR |
摘要 |
<p>An object of the present invention is to provide a germanium-adding source which can be easily handled when used for adding germanium to a compound semiconductor and, especially, for obtaining a low-resistance germanium-doped n-type compound semiconductor. The inventive germanium adding source for a compound semiconductor comprises an organic germanium compound.</p> |
申请公布号 |
WO2006022423(A1) |
申请公布日期 |
2006.03.02 |
申请号 |
WO2005JP15834 |
申请日期 |
2005.08.24 |
申请人 |
SHOWA DENKO K.K.;OKUYAMA, MINEO;TOMOZAWA, HIDEKI |
发明人 |
OKUYAMA, MINEO;TOMOZAWA, HIDEKI |
分类号 |
H01L21/205;C23C16/22;H01L33/32;H01S5/343 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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