发明名称 GERMANIUM-ADDING SOURCE FOR COMPOUND SEMICONDUCTOR, PRODUCTION METHOD OF COMPOUND SEMICONDUCTOR USING THE SAME AND COMPOUND SEMICONDUCTOR
摘要 <p>An object of the present invention is to provide a germanium-adding source which can be easily handled when used for adding germanium to a compound semiconductor and, especially, for obtaining a low-resistance germanium-doped n-type compound semiconductor. The inventive germanium adding source for a compound semiconductor comprises an organic germanium compound.</p>
申请公布号 WO2006022423(A1) 申请公布日期 2006.03.02
申请号 WO2005JP15834 申请日期 2005.08.24
申请人 SHOWA DENKO K.K.;OKUYAMA, MINEO;TOMOZAWA, HIDEKI 发明人 OKUYAMA, MINEO;TOMOZAWA, HIDEKI
分类号 H01L21/205;C23C16/22;H01L33/32;H01S5/343 主分类号 H01L21/205
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