| 摘要 |
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; forming a gate insulating layer; forming a semiconductor layer; forming a lower data line; forming an upper data line including a source electrode and a drain electrode, the upper data line including a portion disposed on the semiconductor layer without interposing the lower data line; forming a passivation layer having a first contact hole exposing the drain electrode at least in part; and forming a pixel electrode on the first contact hole to contact the drain electrode. |
