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发明名称
局部金属矽化之取代闸极
摘要
一种完全金属矽化之取代闸极的形成制程,用以制造出含有均匀厚度的金属矽化之闸极。首先,形成一闸极介电质于一基材之上。之后,形成一含矽层于闸极介电质之上。接着,形成一介电层于含矽层之上。然后,形成一顶层于介电层之上。将闸极介电质、含矽层、介电层与顶层图案化为一闸极堆,再沿着此闸极堆之一边形成一间隙壁。最后去除顶层与介电层,之后再沉积一金属层在含矽层之上并且矽化此金属层。
申请公布号
TW200608494
申请公布日期
2006.03.01
申请号
TW094117585
申请日期
2005.05.27
申请人
台湾积体电路制造股份有限公司
发明人
王志豪;王焱平;胡正明
分类号
H01L21/336;H01L27/12;H01L21/28;H01L29/76
主分类号
H01L21/336
代理机构
代理人
蔡坤财
主权项
地址
新竹市新竹科学工业园区力行六路8号
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