Resistive memory device, in particular CBRAM memory

摘要

The resistive solid state memory of the CBRAM (conductive bridging RAM) type has groups of resistive elements [Rc] connected to a common field effect transistor, FET, [T] to form a 1T4R arrangement. The number of resistive elements coupled to the control transistor is dependent upon the address, write, read and erase connections. For the group there are bit and word lines connected to the FET.