发明名称 SUBSTRATE FOR STRESSED SYSTEMS AND METHOD FOR CRYSTAL GROWTH ON SUCH A SUBSTRATE
摘要 <p>A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.</p>
申请公布号 EP1629526(A1) 申请公布日期 2006.03.01
申请号 EP20040767192 申请日期 2004.05.27
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 LETERTRE, FABRICE;GHYSELEN, BRUNO;RAYSSAC, OLIVIER
分类号 B81C1/00;H01L21/20;H01L21/762;(IPC1-7):H01L21/20 主分类号 B81C1/00
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