发明名称 |
Semiconductor device and fabrication method therefor |
摘要 |
<p>An n-type channel diffused layer and an n-type well diffused layer are formed in the top portion of a semiconductor substrate, and a gate insulating film and a gate electrode are formed on the semiconductor substrate. Using the gate electrode as a mask, boron and arsenic are implanted to form p-type extension implanted layers and n-type pocket impurity implanted layers. Fluorine is then implanted using the gate electrode as a mask to form fluorine implanted layers The resultant semiconductor substrate is subjected to rapid thermal annealing, forming p-type high-density extension diffused layers and n-type pocket diffused layers. Sidewalls and p-type high-density source/drain diffused layers are then formed.
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申请公布号 |
EP1455386(A3) |
申请公布日期 |
2006.03.01 |
申请号 |
EP20040002341 |
申请日期 |
2004.02.03 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NODA, TAIJI |
分类号 |
H01L21/336;H01L21/265;H01L21/28;H01L21/324;H01L29/78;H01L29/06;H01L29/49;H01L29/51 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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