| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same which enable stable formation of a good cleavage plane on a semiconductor layer with good controllability, even in the case where a substrate having no cleavage property or difficult to cleave or having a different cleavage direction from the semiconductor layer is used, in forming an end surface made of a cleavage plane on a semiconductor layer stacked on a substrate, or where the dimension of the semiconductor device is to be as small as 1 mm or less, and a substrate for manufacturing a semiconductor device which is used for manufacturing such a semiconductor device. SOLUTION: A semiconductor layer 2 made of a III-V compound semiconductor constituting a laser structure is stacked on a sapphire substrate 1. Of the semiconductor layer 2 in a portion where a resonator end surface 3 is to be formed, at portions except at the portions corresponding to a ridge stripe portion 11 and a mesa portion 12, more specifically, both lateral portions of the portion corresponding to the mesa portion 12, a stripe-shaped cleavage auxiliary groove 4 extending in parallel with the (11-20) planes of the semiconductor layer 2 is formed, and the semiconductor layer 2 and the sapphire substrate 1 are cleaved from the cleavage auxiliary groove 4, thus obtaining the resonator end surface 3 made of the cleavage plane on the semiconductor layer 2. |
