| 摘要 |
<p>An electron emission device includes first (3) and second (4) substrates facing each other, cathode electrodes (6) formed on the first substrate (2), and electron emission regions (12) formed on the cathode electrodes (6). An insulating layer (8) is formed on the cathode electrodes (6) with opening portions (81) exposing the electron emission regions (12). Gate electrodes (10) are formed on the insulating layer (8) with opening portions (101) corresponding to the opening portions (81) of the insulating layer (8). Phosphor layers (14) are formed on the second substrate (4). At least one anode electrode (18) is formed on a surface of the phosphor layers (14). The cathode (6) and the gate electrodes (10) are formed by thin filming, and the insulating layer (8) is formed by thick filming.</p> |
