发明名称 Semiconductor memory device having multibank
摘要 There is provided a semiconductor memory device having a multibank in which a single large memory cell is divided into a plurality of banks without increasing power consumption and chip size. In the semiconductor memory device, a memory cell array is divided into a plurality of banks arranged alternately, and each bank includes a plurality of unit memory cell arrays. In addition, column selection lines of each bank are connected to alternate output ports of a column decoder, and the column decoder enables the column selection lines of a bank selected from the plurality of banks in response to address decoding signals and bank selection signals.
申请公布号 US6026045(A) 申请公布日期 2000.02.15
申请号 US19980035678 申请日期 1998.03.05
申请人 SAMSUNG ELECTRONICS, CO., LTD. 发明人 SON, MOON-HAE
分类号 G11C11/401;G11C7/10;G11C8/10;G11C11/407;(IPC1-7):G11C8/00 主分类号 G11C11/401
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