发明名称 |
Vertically emitting semiconductor laser with external resonator and its method of fabrication |
摘要 |
<p>The vertical laser has a substrate [2]. A Bragg mirror layer [3], an active layer [4], a first cover [5], a current guide layer [6] and a second cover [7]. This creates a current blocking region [12] and a current transmission region [13]. Electrical contacts are formed on the surface. An external resonator volume [14] overlaps with the current transmission region.</p> |
申请公布号 |
EP1630914(A1) |
申请公布日期 |
2006.03.01 |
申请号 |
EP20050016990 |
申请日期 |
2005.08.04 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
SCHMID, WOLFGANG;STREUBEL, KLAUS;LINDER, NORBERT |
分类号 |
H01S5/183;H01S5/14 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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