发明名称 Vertically emitting semiconductor laser with external resonator and its method of fabrication
摘要 <p>The vertical laser has a substrate [2]. A Bragg mirror layer [3], an active layer [4], a first cover [5], a current guide layer [6] and a second cover [7]. This creates a current blocking region [12] and a current transmission region [13]. Electrical contacts are formed on the surface. An external resonator volume [14] overlaps with the current transmission region.</p>
申请公布号 EP1630914(A1) 申请公布日期 2006.03.01
申请号 EP20050016990 申请日期 2005.08.04
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 SCHMID, WOLFGANG;STREUBEL, KLAUS;LINDER, NORBERT
分类号 H01S5/183;H01S5/14 主分类号 H01S5/183
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