METHOD FOR FORMING PATTERNS OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming patterns of a semiconductor device is provided to minimize a scattered reelection by increasing a thickness of an anti-reflective layer as much as a thickness of a plasma oxide layer. CONSTITUTION: A method for forming patterns of a semiconductor device comprises the steps of: forming a conductive layer(102,103) and an anti-reflective layer(104) on a semiconductor substrate(100); forming an anti-reflective layer pattern(104a) by etching partially the anti-reflective layer; and etching the conductive layer by using the anti-reflective layer pattern as a mask and forming a conductive layer pattern. The anti-reflective layer is formed as a plasma-SiON layer.