| 摘要 |
<p>A semiconductor device includes a semiconductor substrate (100), an isolation film (4) that is provided in one principal surface of the semiconductor substrate, wiring (1) that is arranged on the isolation film, a diffusion layer (16) that is formed inside the semiconductor substrate and located in the vicinity of the isolation film, and an insulating film (8) that covers the diffusion layer (16) over the one principal surface of the semiconductor substrate (100). The insulating film further covers a portion of the isolation film (4) near to the diffusion layer and comes into contact with the side of the wiring (1) near to the diffusion layer.
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