发明名称 |
Semiconductor light emitting element |
摘要 |
A semiconductor light emitting element of a monolithic structure, including: a first-conductivity-type semiconductor substrate; an active layer formed on the first-conductivity-type semiconductor substrate; a second-conductivity-type clad layer formed on the active layer; and a current diffusion layer formed on the second-conductivity-type clad layer, wherein the active layer is of a first conductivity type.
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申请公布号 |
US7005682(B2) |
申请公布日期 |
2006.02.28 |
申请号 |
US20040766606 |
申请日期 |
2004.01.27 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
OHTA KIYOHISA;NAKATSU HIROSHI;SASAKI KAZUAKI;NAKAMURA JUNICHI |
分类号 |
H01L33/14;H01L33/30;H01L33/40 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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