| 发明名称 |
Double-gate flash memory device |
| 摘要 |
The conventional flash memory device is fabricated by the MOS processing technology on a bulk substrate and has a similar configuration to an MOS device.
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| 申请公布号 |
US7005700(B2) |
申请公布日期 |
2006.02.28 |
| 申请号 |
US20040751860 |
申请日期 |
2004.01.06 |
| 申请人 |
LEE JONG HO |
发明人 |
LEE JONG HO |
| 分类号 |
H01L29/788;H01L21/28;H01L29/423 |
主分类号 |
H01L29/788 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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