Semiconductor device with high-k gate dielectric and quasi-metal gate and method of forming thereof,申请号SG20050004556-传众专利搜索

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发明名称	Semiconductor device with high-k gate dielectric and quasi-metal gate and method of forming thereof
摘要
申请公布号	SG119327(A1)	申请公布日期	2006.02.28
申请号	SG20050004556	申请日期	2005.07.21
申请人	TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.	发明人	CHIH-HAO WANG;CHING-WEI TSAI;CHEN-MING HU
分类号		主分类号
代理机构		代理人
主权项
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