| 摘要 |
A MAGNETORESISTANCE EFFECT ELEMENT PROVIDED WITH A SPIN VALVE FILM COMPOSED OF A FIRST MAGNETIC LAYER (1) FORMED ON A METALLIC BUFFER LAYER (4), A MIDDLE NON-MAGNETIC LAYER (3) FORMED ON THE FIRST MAGNETIC LAYER, AND A SECOND MAGNETIC LAYER (2) FORMED ON THE NON-MAGNETIC LAYER, HAS AN ATOMIC-DIFFUSION BARRIER LAYER (5) WHOSE AVERAGE THICKNESS IS 2 NM OR LESS FORMED IN THE INTERFACE BETWEEN THE METALLIC BUFFER LAYER (4) AND THE FIRST MAGNETIC LAYER (1). OR A MAGNETORESISTANCE EFFECT ELEMENT PROVIDED WITH A SPIN VALVE FILM COMPOSED OF A FIRST MAGNETIC LAYER (1) COMPOSED OF A LAMINATED FILM OF A MAGNETIC UNDERCOAT LAYER (12) AND A FERROMAGNETIC LAYER (11), A MIDDLE NON-MAGNETIC LAYER (3) FORMED ON THE FIRST MAGNETIC LAYER, AND A SECOND MAGNETIC LAYER (2) FORMED ON THE MIDDLE NON-MAGNETIC LAYER, HAS AN ATOMIC-DIFFUSION BARRIER LAYER (5) WHOSE AVERAGE THICKNESS IS 2 NM OR LESS FORMED IN THE INTERFACE BETWEEN THE MAGNETIC UNDERCOAT LAYER AND THE FERROMAGNETIC LAYER.
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