发明名称 |
Charged particle beam exposure apparatus, charged particle beam exposure method, and device manufacturing method using the same apparatus |
摘要 |
A charged particle beam exposure apparatus has a beam shaping optical system which forms an image of a charged particle source that emits charged particle beams, an aperture array and electrostatic lens which form a plurality of images of the charged particle source from the image of the charged particle source, a reduction electron optical system which reduces and projects the plurality of images of the charged particle source onto a wafer, and the first stigmator which generates astigmatism when the beam shaping optical system forms the image of the charged particle source in order to correct astigmatism generated in the reduction electron optical system. A charged particle beam exposure method of exposing a substrate by scanning with charged particle beams includes an adjustment step of making the size in the scanning direction of charged particle beams on the substrate smaller than the size in a direction perpendicular to the direction.
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申请公布号 |
US7005659(B2) |
申请公布日期 |
2006.02.28 |
申请号 |
US20040885666 |
申请日期 |
2004.07.08 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP. |
发明人 |
MURAKI MASATO;OHTA HIROYA;KAMIMURA OSAMU |
分类号 |
H01J3/26;G21K5/10;H01J37/153;H01J37/28;H01J37/317 |
主分类号 |
H01J3/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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