发明名称 |
Semiconductor device |
摘要 |
<p>There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source of a TFT (203) connected to an output node, and a circuit formed of TFTs (201) and (202) has a function to bring a node alpha into a floating state. When the node alpha is in the floating state, a potential of the node alpha is caused higher than VDD by using gate-source capacitance coupling of the TFT (203) through the capacitance (205), thus an output signal having an amplitude of VDD-GND can be normally obtained without causing amplitude attenuation due to the threshold value of the TFT. <IMAGE></p> |
申请公布号 |
SG119148(A1) |
申请公布日期 |
2006.02.28 |
申请号 |
SG20020002130 |
申请日期 |
2002.04.11 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MUNEHIRO AZAMI;SHOU NAGAO;YOSHIFUMI TANADA |
分类号 |
G02F1/1368;G02F1/133;G09G3/00;G09G3/20;G09G3/36;G11C19/00;H01L21/8238;H01L27/092;H01L29/786;H01L51/50;H03K17/06;H03K17/687;H03K19/017;(IPC1-7):H03K19/017 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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