Method of forming a static random access memory with a buried local interconnect,申请号SG20050004512-传众专利搜索

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发明名称	Method of forming a static random access memory with a buried local interconnect
摘要
申请公布号	SG119324(A1)	申请公布日期	2006.02.28
申请号	SG20050004512	申请日期	2005.07.18
申请人	TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.	发明人	JHON-JHY LIAW
分类号		主分类号
代理机构		代理人
主权项
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