| 摘要 |
Disclosed is a semiconductor device which comprises a semiconductor chip (61) including a power semiconductor element using a wide band gap semiconductor, bases (62, 63), first and second intermediate members (65, 68a), a heat transferring member (66), a heat dissipating fin (67), and a sealing material (68) for sealing the semiconductor chip (61), the first and second intermediate members (65, 68a) and the heat transferring member (66). End portions of the bases (62, 63) are respectively formed as external connection terminals (62a, 63a). The second intermediate member (68a) is made of a material having a lower thermal conductivity than the first intermediate member (65), and has a larger contact area with the semiconductor chip (61) than the first intermediate member (65). |
