| 摘要 |
A spintronics device of a spin conduction element, a spin switching element and a spin memory element, which are based on a novel operational principle, comprises a magnetic atomic film (13) deposited on the surface of a solid crystal (12), and drain (14) and source (15) electrodes formed at two respective positions on the magnetic atomic film, wherein a system-spin-divided surface electronic state band formed by the surface of the solid crystal (12) and magnetic atomic film (13) is used to provide a spin polarization current. The electrons of a spin of a particular direction are implanted from the source electrode (15) in advance to control the magnetization direction of the magnetic atomic film (13) so that the conduction of the implanted electrons can be turned on and off. A spin memory element can be realized in which the magnetization holding function of the magnetic atomic film (13) is utilized in such a manner that a control of the magnetization direction of the magnetic atomic film (13) serves as an information write operation and that a detection of conductive/cutoff state between the source (15) and drain (14) electrodes serves as a read operation.
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