| 摘要 |
Different embodiments of quantum supertransistors development are proposed. In this transistor nanostructural material consisting of clusters with tunnel transparent casings is arranged between electrodes. The clusters have such dimensions at which electron resonance properties are displayed. Said dimension is determined by annular radius of electron wave according to formula r=ħ/(mαc) = 7.2517nm, where ħ - Plank's constant, m- electron mass, α = 1/137.036 –thin structure constant, c-velocity of light. The cluster dimension is determined between rand 4r, wherein the thickness of a tunnel transparent gap is less than r. Record of electron waveform permits to develop nanostructural materials with quantum size effects. It makes possible to manufacture transistors with operating temperature up to 325° and maximum operating frequency 350 GHz, various memory and all possible logic devices with remembering previous state with off power. |
