发明名称 METHOD FOR SIMULTANEOUSLY OBTAINING A PAIR OF SUBSTRATES COVERED BY A USEFUL LAYER
摘要 The invention relates to a method for simultaneously obtaining at least one pair of structures (51, 52) each having a useful layer (110, 120) placed on a substrate (71,2). This method is characterized by comprising the following steps consisting of: a) preparing a row structure (1) having a useful layer placed on a supporting substrate (2); b) forming a fragilization area inside said useful layer whereby defining a front useful layer (110) and a rear useful layer (120); c) adhering a stiffening substrate (71) to said front useful layer (110); d) removing the stack of layers along the fragilization area in order to obtain two row structures (2), the first (51) containing the supporting substrate (2) and the rear useful area (120), and the second (52) containing the stiffening substrate (71) and the front useful layer (110). The invention is for use in the fields of electronics, optoelectronics or optics.
申请公布号 KR20060017615(A) 申请公布日期 2006.02.24
申请号 KR20057022437 申请日期 2005.11.24
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;COMMISSARIAT A L`ENERGIE ATOMIQUE 发明人 GHYSELEN BRUNO;AULNETTE CECILE;BATAILLOU BENOIT;MAZURE CARLOS;MORICEAU HUBERT
分类号 H01L21/265;H01L21/762 主分类号 H01L21/265
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