| 摘要 |
A semiconductor manufacturing device comprises a processing chamber (11), a transferring path (12) for loading/unloading a wafer into/from the processing chamber (11), a discharging passage (13) for discharging a processing gas in the processing chamber (11), a discharging line (40, 40'), and further a plain-shaped heating unit (50, 60, 70, 80, 170, 270). In order to heat the inner walls (11a, 11b, 12a, 13a, 410a, 420a) of the processing chamber (11), transferring path (12), discharging passage (13) and discharging pipes (410, 420), a plain shaped heating unit is so formed that a resistive heating element sandwiched between a pair of metal plates covers the inner walls from the inside. Therefore, the efficiency of heating the walls exposed to the processing gas is increased, thereby preventing adherence of byproducts and deterioration of the resistive heating element.
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