发明名称 |
Strained semiconductor-on-insulator structures and methods for making strained semiconductor-on-insulator structures |
摘要 |
The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the CTEs of the semiconductor and glass or glass-ceramic selected such that the first layer is under tensile strain. The present invention also relates to methods for making strained semiconductor-on-insulator layers.
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申请公布号 |
US2006038227(A1) |
申请公布日期 |
2006.02.23 |
申请号 |
US20050196866 |
申请日期 |
2005.08.03 |
申请人 |
AITKEN BRUCE G;GADKAREE KISHOR P;DEJNEKA MATTHEW J;PINCKNEY LINDA R |
发明人 |
AITKEN BRUCE G.;GADKAREE KISHOR P.;DEJNEKA MATTHEW J.;PINCKNEY LINDA R. |
分类号 |
H01L27/01 |
主分类号 |
H01L27/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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