Blockable semiconductor device having insulator profile between anode and cathode metallizations

摘要

A blockable semiconductor device has, at an anode metallization edge region, an insulator profile (10a) with a metallized curved region (KB) and a plinth region (SB) which separates the metallization from an outer cathode metallization (3), to result in a constant field line path without extreme values between the metallizations on blocking voltage application. A blockable semiconductor device has: (a) at an anode metallization edge region and directly on the device substrate (9), an insulator profile (10a) with a curved region (KB), which starts flat and extends at increasingly greater curvature outwardly and upwardly, and a plinth region (SB); (b) a metallization (30a) which follows the surface curvature and which extends the inner anode metallization (1) sideways; and (c) an outer metallization (3) spaced from the upper end of the curved metallization by the encircling plinth region (SB) of the insulator profile so that a constant field line path, which avoids extreme values, occurs between the two metallizations (1,3) on application of blocking voltage between the spaced metallizations.